Single crystal silicon sensor with additional layer and method of producing the same
US7138694B2 · kind B2 · utility
37Cited by
4References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 2, 2004 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Aug 30, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/125
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.