Electronic component for amplifying high frequency power and radio communication system
US7139538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2002 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Dec 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/0408
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.