Method and apparatus for anisotropic etching
US7141504B1 · kind B1 · utility
21Cited by
14References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 23, 1999 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Jul 23, 2019 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of treating a substrate material or a film present on the material surface comprising cyclically performing the following steps: (a) etching the material or film; (b) depositing or forming a passivation layer on the surfaces of an etched feature; and (c) selectively removing the passivation layer from the etched feature in order that the etching proceeds in a direction substantially perpendicular to the material or film surface. At least one of the steps (a) or (b) is performed in the absence of a plasma. Also disclosed is an apparatus for performing the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.