Method for bilayer resist plasma etch
US7141505B2 · kind B2 · utility
5Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Jul 20, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl4 gas. Then the bilayer resist is etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.