Defect inspection instrument and positron beam apparatus
US7141790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Oct 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2807
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The purpose of the present invention is to inspect the position, number, and size of fine defects in a variety of solid state materials, including a semiconductor device and metallic materials, with a high spatial resolution of nanometer order. The positron irradiation function is installed in the converged electron beam apparatus. The defect location information is obtained from the converged electron beam location information, and the number and size of defects are obtained from the detected information of γ-rays created by pair annihilation of electrons and positrons, and this two-dimensional distribution information is displayed in the monitor. Information on ultra-fine defects in a crystal can be provided with high-speed and high-resolution, and nondestructively in the case of a semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.