Method for selective electroplating of semiconductor device I/O pads using a titanium-tungsten seed layer

US7144490B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Tien-Jen Cheng · Bedford, US
• David E. Eichstadt · Chicago, US
• Jonathan H. Griffith · Hopewell Junction, US
• Sarah H. Knickerbocker · Hopewell Junction, US
• Rosemary A. Previti-Kelly · South Burlington, US
• Roger A. Quon · Austin, US
• Kamalesh K. Srivastava · Wappingers Falls, US
• Keith Kwong Hon Wong · Wappingers Falls, US

Key dates

• Filing date: Nov 18, 2003
• Grant date: Dec 5, 2006
• Expiry date: Aug 4, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/04953
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.