Method of fabricating a light emitting device, and light emitting device
US7145180B2 · kind B2 · utility
8Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2003 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Oct 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion 24 is formed by a metal organic vapor-phase epitaxy process, and the current spreading layer 7, on such light emitting layer portion 24, is formed to have conductivity type of n-type by a hydride vapor-phase epitaxy process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.