Substrate independent multiple input bi-directional ESD protection structure
US7145187B1 · kind B1 · utility
14Cited by
3References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 12, 2003 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Mar 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
In a multiple input ESD protection structure, the inputs are isolated from the substrate by highly doped regions of opposite polarity to the input regions. Dual polarity is achieved by providing a symmetrical structure with n+ and p+ regions forming each dual polarity input. The inputs are formed in a p-well which, in turn, is formed in a n-well. Each dual polarity input is isolated by a PBL under the p-well, and a NISO underneath the n-well. An isolation ring separates and surrounds the inputs. The isolation ring comprises a p+ ring or a p+ region, n+ region, and p+ region formed into adjacent rings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.