Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation
US7147900B2 · kind B2 · utility
1Cited by
16References
36Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 14, 2003 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Jan 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.