Binary OPC for assist feature layout optimization

US7147976B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Lars Liebmann · Poughquag, US
• Richard A. Ferguson · Pleasant Valley, US
• Allen H. Gabor · Katonah, US
• Mark A. Lavin · Katonah, US

Key dates

• Filing date: Oct 17, 2005
• Grant date: Dec 12, 2006
• Expiry date: Oct 17, 2025

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/36
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element data including spacing of main pattern features and SRAF elements, applying SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements, legalizing the SRAF elements as a function of style options, and providing a target pattern comprising a modified layout for the mask, identifying problem edge segments of an SRAF element of the target pattern at risk of causing a printing defect, applying a selected bias to the problem edge segments to modify the pattern where there are areas of SRAF element loss, and providing an output of a modified pattern with modified SRAF elements removing the areas of SRAF element loss. The system can provide SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements may be based on data from the SRAF table; or the system can applying model based OPC for exposure dose values based…