Semiconductor device having a fully silicided gate electrode and method of manufacture therefor
US7148143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Jul 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a silicided gate electrode (150) located over a substrate (110), the silicided gate electrode (150) having gate sidewall spacers (160) located on sidewalls thereof. The semiconductor device (100) further includes source/drain regions (170) located in the substrate (110) proximate the silicided gate electrode (150), and silicided source/drain regions (180) located in the source/drain regions (170) and at least partially under the gate sidewall spacers (160).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.