Inventor · Plano, TX, US

Shaofeng Yu

53Patents
10h-index
78Co-inventors
81Inventor score

Filing activity: May 12, 1999 → Jun 9, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7189627B2 Method to improve SRAM performance and stability Electricity 126 Expired
US8467233B2 Asymmetric static random access memory cell with dual stress liner Electricity 20 Active
US7223679B2 Transistor gate electrode having conductor material layer Electricity 19 Expired
US7231463B2 Multi-level ring peer-to-peer network structure for peer and object discovery Electricity 17 Expired
US7148097B2 Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors Electricity 16 Expired
US7838356B2 Gate dielectric first replacement gate processes and integrated circuits therefrom Electricity 16 Active
US8062966B2 Method for integration of replacement gate in CMOS flow Electricity 16 Active
US7157358B2 Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same Electricity 13 Expired
US8372703B2 Gate dielectric first replacement gate processes and integrated circuits therefrom Electricity 10 Active
US7968957B2 Transistor gate electrode having conductor material layer Electricity 10 Active
US7416949B1 Fabrication of transistors with a fully silicided gate electrode and channel strain Electricity 8 Active
US7148143B2 Semiconductor device having a fully silicided gate electrode and method of manufacture therefor Electricity 7 Expired
US7229871B2 Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors Electricity 7 Active
US7253049B2 Method for fabricating dual work function metal gates Electricity 7 Expired
US6410359B1 Reduced leakage trench isolation Electricity 6 Expired
US6215165A Reduced leakage trench isolation Electricity 5 Expired
US6903432B2 Photosensitive device Emerging Cross-Sectional Technologies 5 Expired
US7338888B2 Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same Electricity 5 Expired
US7642610B2 Transistor gate electrode having conductor material layer Electricity 4 Active
US8237234B2 Transistor gate electrode having conductor material layer Electricity 3 Active
US7943456B2 Selective wet etch process for CMOS ICs having embedded strain inducing regions and integrated circuits therefrom Electricity 3 Active
US7084471B2 Photosensitive device Emerging Cross-Sectional Technologies 3 Expired
US7547596B2 Method of enhancing drive current in a transistor Electricity 3 Active
US7687396B2 Method of forming silicided gates using buried metal layers Electricity 2 Active
US7994009B2 Low cost transistors using gate orientation and optimized implants Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.