Semiconductor device and method for manufacturing the same
US7148158B2 · kind B2 · utility
2Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Jan 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
Abstract
A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1–30 atomic % of chlorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.