Semiconductor device with a high-k gate dielectric and a metal gate electrode
US7148548B2 · kind B2 · utility
96Cited by
20References
27Claims
0Family size
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Key dates
| Filing date | Jul 20, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Jul 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is described that comprises a gate dielectric and a metal gate electrode that comprises an aluminide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.