Spin-transfer based MRAM using angular-dependent selectivity
US7149106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Nov 2, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (“MRAM”) device can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element and the free magnetic element in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g., a digit line current. When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.