Nanocrystal structures
US7150910B2 · kind B2 · utility
18Cited by
26References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Nov 20, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.