Metal gate MOSFET by full semiconductor metal alloy conversion
US7151023B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2005 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Aug 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
Abstract
A MOSFET structure and method of forming is described. The method includes forming a metal-containing layer that is thick enough to fully convert the semiconductor gate stack to a semiconductor metal alloy in a first MOSFET type region but only thick enough to partially convert the semiconductor gate stack to a semiconductor metal alloy in a second MOSFET type region. In one embodiment, the gate stack in a first MOSFET region is recessed prior to forming the metal-containing layer so that the height of the first MOSFET semiconductor stack is less than the height of the second MOSFET semiconductor stack. In another embodiment, the metal-containing layer is thinned over one MOSFET region relative to the other MOSFET region prior to the conversion process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.