Reducing the contact resistance in organic field-effect transistors with palladium contacts by using nitriles and isonitriles

US7151275B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hagen Klauk · Erlangen, DE
• Guenter Schmid · Hemhofen, DE
• Ute Zschieschang · Stuttgart, DE
• Marcus Halik · Erlangen, DE
• Efstratios Terzoglu · Erlangen, DE

Key dates

• Filing date: Dec 27, 2004
• Grant date: Dec 19, 2006
• Expiry date: Dec 27, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/615

Abstract

A semiconductor device includes a semiconductor section formed from an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section, wherein a layer of a nitrile or of an isonitrile is arranged between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The nitrile or isonitrile acts as a charge transfer molecule facilitating the transfer of charge carriers between contact and organic semiconductor material. This allows the contact resistance between contact and organic semiconductor material to be significantly reduced.