Non-volatile semiconductor memory device and process of manufacturing the same
US7151295B2 · kind B2 · utility
27Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2004 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Jul 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
Abstract
In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.