Sensing of resistance variable memory devices
US7151688B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2004 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Mar 31, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance variable memory device such as e.g., a PCRAM memory device, with either a 4T (transistor) or 2T memory cell configuration and either a dual cell plate or word line configuration. The device includes additional circuitry configured to write or erase addressed cells while keeping the voltage across non-addressed cells at approximately 0V. The device also includes circuitry that reads the addressed cells in a manner that increases the sensing window without causing the potential across the cell to be greater than approximately 200 mV. The device may also sense the state of its addressed cells closer in time to when the cells are accessed, in comparison to typical sensing techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.