Patent · US Expired

Non-volatile semiconductor memory

US7151697B2 · kind B2 · utility

5Cited by

10References

38Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stephan Riedel · Frankfurt am Main, DE
Elard Stein Von Kamienski · Dresden, DE
Norbert Schulze · Radebeul, DE

Key dates

Filing date	Nov 30, 2004
Grant date	Dec 19, 2006
Priority date	—
Expiry date	Feb 18, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A non-volatile semiconductor memory includes a substrate having a substrate region, at least one word line, a plurality of non-volatile memory cells arranged in a plurality of sectors and further comprising first wells of a first doping type, electrically insulating elements and switching elements. Each sector includes a plurality of non-volatile memory cells commonly arranged in a respective first well. The at least one word line electrically connecting memory cells of a group of sectors among the plurality of sectors. The first wells are separated from the substrate region and from each other by means of the electrically insulating elements. Each first well is connected to a respective switching element and the semiconductor memory is constructed such that each first well is biasable to a predetermined potential by means of the respective switching element. Further, a method is provided for operating the above non-volatile semiconductor memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.