Patent · US Expired

Pattern measurement method, manufacturing method of semiconductor device, pattern measurement apparatus, and program

US7151855B2 · kind B2 · utility

4Cited by
10References
30Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 26, 2003
Grant dateDec 19, 2006
Priority date
Expiry dateMay 15, 2024

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06T2207/30148
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A pattern measurement method includes acquiring graphic data of a plurality of patterns including image data; processing the graphic data to detect a coordinate of an edge point of the pattern; combining the edge points between the patterns to make a pair of edge points and calculating a distance between the edge points constituting each pair of edge points and an angle between a straight line which connects the edge point to the other edge point and an arbitrary axial line with respect to each pair of edge points to prepare a distance angle distribution map which is a distribution map of the calculated distance and angle of the pair of edge points; and evaluating at least one of a relation of shape between the patterns, a relation of size between the patterns, and a relative location between the patterns on the basis of the prepared distance angle distribution map.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.