Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
US7153335B2 · kind B2 · utility
16Cited by
5References
16Claims
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Key dates
| Filing date | Oct 10, 2003 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Oct 10, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.