Low κ dielectric inorganic/organic hybrid films and method of making
US7153580B2 · kind B2 · utility
4Cited by
6References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 8, 2003 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Aug 8, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.