Method of fabricating a ferroelectric capacitor having a ferroelectric film and a paraelectric film
US7153704B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2003 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Jun 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method of fabricating a ferroelectric capacitor that can inhibit ferroelectric characteristics from deteriorating includes forming a lower electrode film over from on a top surface of a plug disposed in a silicon oxide film to on the silicon oxide film; forming a paraelectric film so as to frame-likely cover a periphery of a surface of the lower electrode film with a predetermined width; forming a ferroelectric film over from on the exposed lower electrode film from an opening of the paraelectric film to on the paraelectric film in the surroundings of the exposed lower electrode film; forming an upper electrode film, in a surface of the ferroelectric film, over from on a region that faces a contact surface between the lower electrode film and the ferroelectric film to on a region that faces the paraelectric film; and etching through a mask that covers, in a surface of the upper electrode film, from a region that faces the contact surface to a region that faces the paraelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.