Methods of forming capacitors and methods of forming capacitor dielectric layers
US7153736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Apr 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a capacitor includes forming first capacitor electrode material over a semiconductor substrate. A silicon nitride comprising layer is formed over the first capacitor electrode material. The semiconductor substrate with silicon nitride comprising layer is provided within a chamber. An oxygen comprising plasma is generated remote from the chamber. The remote plasma generated oxygen is fed to the semiconductor substrate within the chamber at a substrate temperature of no greater than 750° C. effective to form a silicon oxide comprising layer over the silicon nitride comprising layer. After the feeding, a second capacitor electrode material is formed over the silicon oxide comprising layer. Methods of forming capacitor dielectric layers are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.