Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes
US7153750B2 · kind B2 · utility
3Cited by
11References
21Claims
0Family size
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Key dates
| Filing date | Apr 13, 2004 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Apr 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A capacitor of a semiconductor device includes a cylinder type capacitor lower electrode, a dielectric layer, and an upper electrode. The upper electrode includes a metallic layer on the dielectric layer and a doped polySi1-xGex layer stacked on the metallic layer. Methods of forming these capacitors also are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.