Nitride-based semiconductor light-emitting device
US7154123B2 · kind B2 · utility
8Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 18, 2005 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Feb 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.