Source side programming
US7154141B2 · kind B2 · utility
8Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2001 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Feb 2, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash EEPROM array having a double-diffused source junction that can be used for source side programming. The flash EEPROM array, when programmed from the source side exhibits fast programming rates. Additionally, source side programming of arrays having different physical characteristics (e.g. transistor cell channel length) exhibit tighter program rate distributions than for the same arrays in which drain side programming is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.