Thyristor-based semiconductor memory device and its method of manufacture
US7157342B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2004 |
| Grant date | Jan 2, 2007 |
| Priority date | — |
| Expiry date | Mar 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/251
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A thyristor-based memory device may comprise a commonly-implanted base region, in which a common emitter region may be implanted for the left and the right thyristors in a mirror-image pair. The implanting of the base region may include directing the dopant toward a semiconductor material through a window defined by sidewalls formed in a conditioned masking material over the semiconductor material. The resulting base and emitter regions may be substantially symmetrical about a central boundary plane. In relation to the symmetry, one thyristor may be operable with a minimum holding current within about 10 percent of that for the other thyristor in the mirror-image pair.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.