Method of forming SOI-like structure in a bulk semiconductor substrate using self-organized atomic migration
US7157350B2 · kind B2 · utility
17Cited by
6References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2004 |
| Grant date | Jan 2, 2007 |
| Priority date | — |
| Expiry date | Jul 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Bulk silicon is transformed into an SOI-like structure by annealing. Trenches are formed in a bulk substrate to define device sites. The lower portions of the trenches are annealed at low pressure in a hydrogen atmosphere. This transforms the lower trench portions to expanded, spheroidal voids that extend under the device sites. Neighboring voids each reside about half way under an intervening site. A silicon-consuming process forms a liner on the walls of the voids, with the liners on neighboring voids abutting to isolate the intervening device site from the substrate and other device sites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.