Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
US7157358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2004 |
| Grant date | Jan 2, 2007 |
| Priority date | — |
| Expiry date | Jul 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, forming a polysilicon gate electrode (250) over a substrate (210) and forming a protective layer (260) over the polysilicon gate electrode (250) to provide a capped polysilicon gate electrode (230). The method further includes forming a protective oxide (510) on a surface proximate the polysilicon gate electrode (250), and removing the protective oxide (510) using a wet etch, the wet etch not having a substantial impact on the protective layer (260).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.