Method of producing a semiconductor sensor component

US7160750B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Hubert Benzel · Neckartenzlingen, DE
• Heribert Weber · Leverkusen, DE
• Frank Schaefer · Lörrach, DE

Key dates

• Filing date: Feb 21, 2002
• Grant date: Jan 9, 2007
• Expiry date: Aug 6, 2022

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/0139
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for manufacturing a semiconductor component, such as, for example, a multilayer semiconductor component including a micromechanical component, such as, for example, a heat transfer sensor having a semiconductor substrate of silicon, and a sensor region. For inexpensive manufacture of a thermal insulation between the semiconductor substrate and the sensor region a porous layer is provided in the semiconductor component.