Fabrication of advanced silicon-based MEMS devices
US7160752B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2005 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Oct 5, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.