Depletion-mode transistor that eliminates the need to separately set the threshold voltage of the depletion-mode transistor
US7161216B1 · kind B1 · utility
1Cited by
22References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 22, 2003 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | May 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
A semiconductor circuit with a depletion-mode transistor is formed with a method that eliminates the need for a separate mask and implant step to set the threshold voltage of the depletion-mode transistor. As a result, the method of the present invention reduces the cost and complexity associated with the fabrication of a semiconductor circuit that includes a depletion-mode transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.