Heat treatment jig for semiconductor silicon substrate
US7163393B2 · kind B2 · utility
455Cited by
8References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 2, 2004 |
| Grant date | Jan 16, 2007 |
| Priority date | — |
| Expiry date | Feb 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides a heat treatment jig for semiconductor silicon substrates, which, in respective heat treatment of hydrogen annealing or argon annealing, can handle enlargement of the diameter of wafers to be treated and can also prevent slipping and dislocations that occur as a result of the stress caused by the weight of the wafer itself or the deflection of the heat treatment jig itself.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.