Concurrent Fin-FET and thick-body device fabrication

US7163851B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Wagdi W. Abadeer · Jericho, US
• Jeffrey S. Brown · Jeffersonville, US
• David M. Fried · Ithaca, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Edward J. Nowak · South Burlington, US
• Jed H. Rankin · South Burlington, US
• William R. Tonti · South Burlington, US

Key dates

• Filing date: Aug 26, 2002
• Grant date: Jan 16, 2007
• Expiry date: Sep 28, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6739

Abstract

The present invention provides methods for fabrication of fin-type field effect transistors (FinFETs) and thick-body devices on the same chip using common masks and steps to achieve greater efficiency than prior methods. The reduction in the number of masks and steps is achieved by using common masks and steps with several scaling strategies. In one embodiment, the structure normally associated with a FinFET is created on the side of a thick silicon mesa, the bulk of which is doped to connect with a body contact on the opposite side of the mesa. The invention also includes FinFETs, thick-body devices, and chips fabricated by the methods.