High density DRAM with reduced peripheral device area and method of manufacture

US7163891B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Maldei · Durham, US
• Brian Cousineau · Burlington, US
• Guenter Gerstmeier · Chapel Hill, US
• Jon Berry · Durham, US
• Steven Baker · Apex, US
• Jinhwan Lee · Raleigh, US

Key dates

• Filing date: Dec 3, 2004
• Grant date: Jan 16, 2007
• Expiry date: Dec 3, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/05

Abstract

A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.