Patent · US Expired

Using polydentate ligands for sealing pores in low-k dielectrics

US7163900B2 · kind B2 · utility

503Cited by
9References
46Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 1, 2004
Grant dateJan 16, 2007
Priority date—
Expiry dateNov 1, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02274
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In preferred embodiments, a polydentate pore-sealing ligand is used to seal or repair pores damaged by plasma processing. The polydentate ligand includes bidentate ligands corresponding to the general formula X—CH2—(CH2)n—CH2—X or X—Si(CH3)2—(CH2)n—Si(CH3)2—X. The polydentate ligand also includes tridendate ligands corresponding to the general formula X—CH2—(CH2)m(CXH)(CH2)o—CH2—X or X—Si(CH3)2—(CH2)m(CXH)(CH2)o—Si(CH3)2—X. Alternative embodiments may include single or multiply branched polydentate ligands. Other embodiments include ligands that are cross-linked after attachment to the dielectric. Still other embodiments include a derivatization reaction wherein silanol groups formed by plasma damage are removed and favorable dielectric properties are restored.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.