Electrical contact for optoelectronic semiconductor chip and method for its production

US7164158B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Wilhelm Stein · Dresden, DE
• Michael Fehrer · Bad Abbach, DE
• Johannes Baur · Regensburg, DE
• Matthias Winter · Regensburg, DE
• Andreas Ploessl · Regensburg, DE
• Stephan Kaiser · Regensburg, DE
• Berthold Hahn · Hemau, DE
• Franz Eberhard · Kilchberg, CH

Key dates

• Filing date: Feb 26, 2004
• Grant date: Jan 16, 2007
• Expiry date: Feb 26, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.