Structure of semiconductor device with sinker contact region

US7164186B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Angelo Pinto · Augusta, IT
• Jeffrey A. Babcock · Neufahrn, DE
• Michael Schober · Steyr, AT
• Scott Balster · Dallas, US
• Christoph Dirnecker · Unterschleißheim, DE

Key dates

• Filing date: Sep 10, 2004
• Grant date: Jan 16, 2007
• Expiry date: Feb 9, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.