Method of simultaneously initializing two antiferromagnetic layers in a magnetic sensor
US7166173B2 · kind B2 · utility
13Cited by
14References
4Claims
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Key dates
| Filing date | Oct 24, 2003 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Jan 10, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49044
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Magnetic tunnel junction (MTJ) and charge perpendicular-to-plane (CPP) magnetic sensors are disclosed which have a first antiferromagnetic layer for pinning the magnetization direction in a pinned layer and a second antiferromagnetic layer for providing bias stabilization of a free layer. The two antiferromagnetic layers may be formed from the same material and using a spin-flop effect may be initialized simulataneously. A disk drive using these sensors is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.