Robert Beach
31Patents
8h-index
36Co-inventors
75Inventor score
Filing activity: Aug 5, 1999 → Dec 14, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8860156B2 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Electricity | 78 | Active |
| US8138561B2 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM | Electricity | 53 | Active |
| US8609262B2 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application | Emerging Cross-Sectional Technologies | 27 | Active |
| US6449134B1 | Read head with file resettable dual spin valve sensor | Physics | 20 | Expired |
| US7564110B2 | Electrical lapping guides made from tunneling magnetoresistive (TMR) material | Electricity | 15 | Expired |
| US7166173B2 | Method of simultaneously initializing two antiferromagnetic layers in a magnetic sensor | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7630177B2 | Tunnel MR head with closed-edge laminated free layer | Physics | 9 | Active |
| US6721146B2 | Magnetic recording GMR read back sensor and method of manufacturing | Emerging Cross-Sectional Technologies | 8 | Expired |
| US8981503B2 | STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain | Electricity | 7 | Active |
| US6721145B2 | Method for initializing antiferromagnetic layers in a spin valve magnetic sensor | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7150093B2 | Method of manufacturing magnetic recording GMR read back sensor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7530158B2 | CPP read sensor fabrication using heat resistant photomask | Emerging Cross-Sectional Technologies | 6 | Active |
| US10868235B2 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Electricity | 4 | Active |
| US7932717B2 | Test components fabricated with pseudo sensors used for determining the resistance of an MR sensor | Physics | 4 | Active |
| US7768749B2 | Tunnel MR head with long stripe height stabilized through side-extended bias layer | Physics | 3 | Active |
| US9331271B2 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application | Emerging Cross-Sectional Technologies | 2 | Active |
| US10193056B2 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Electricity | 2 | Active |
| US7773349B2 | Tunnel MR head with long stripe height sensor stabilized through the shield | Physics | 2 | Active |
| US7855553B2 | Test components fabricated with large area sensors used for determining the resistance of an MR sensor | Physics | 1 | Active |
| US7469466B2 | Method for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing | Emerging Cross-Sectional Technologies | 1 | Active |
| US7574791B2 | Method to fabricate side shields for a magnetic sensor | Emerging Cross-Sectional Technologies | 1 | Active |
| US7852072B2 | Test-device system for independent characterization of sensor-width and sensor-stripe-height definition processes | Physics | 1 | Active |
| US10297300B2 | Method and system for determining temperature using a magnetic junction | Physics | 0 | Active |
| US11930717B2 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Electricity | 0 | Active |
| US10276226B2 | Method and system for determining temperature using a magnetic junction | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.