High brightness light-emitting device and manufacturing process of the light-emitting device
US7166483B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2004 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Jul 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.