Patent · US Expired

Method for fabricating image sensor with inorganic microlens

US7166484B2 · kind B2 · utility

4Cited by
4References
9Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 25, 2004
Grant dateJan 23, 2007
Priority date
Expiry dateJan 25, 2025

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/8063

Abstract

The present invention relates to a method for fabricating an inorganic microlens. The method includes the steps of: depositing an inorganic layer on a substrate; forming a hemispherical photoresist pattern on the inorganic layer; and performing a blanket etch-back process to thereby form a hemispherical inorganic microlens.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.