Semiconductor device and method of manufacturing the same
US7166514B2 · kind B2 · utility
5Cited by
3References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2005 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Feb 1, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
Abstract
A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process. Impurities used to form a channel region are selectively implanted into portions of a semiconductor substrate adjacent to the gate structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.