Choong-Ho Lee
145Patents
14h-index
125Co-inventors
89Inventor score
Filing activity: Nov 6, 1995 → Feb 23, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7329580B2 | Method of fabricating a semiconductor device having self-aligned floating gate and related device | Electricity | 254 | Active |
| US7473611B2 | Methods of forming non-volatile memory cells including fin structures | Electricity | 236 | Expired |
| US7323375B2 | Fin field effect transistor device and method of fabricating the same | Electricity | 85 | Expired |
| US7317230B2 | Fin FET structure | Electricity | 66 | Expired |
| US7332386B2 | Methods of fabricating fin field transistors | Electricity | 37 | Expired |
| US7177192B2 | Method of operating a flash memory device | Electricity | 33 | Expired |
| US7586149B2 | Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same | Electricity | 26 | Active |
| US8053347B2 | Method of manufacturing semiconductor device | Electricity | 23 | Active |
| US5567642A | Method of fabricating gate electrode of CMOS device | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7358142B2 | Method for forming a FinFET by a damascene process | Electricity | 20 | Expired |
| US7217623B2 | Fin FET and method of fabricating same | Electricity | 20 | Expired |
| US7348628B2 | Vertical channel semiconductor devices and methods of manufacturing the same | Electricity | 17 | Active |
| US7160780B2 | Method of manufacturing a fin field effect transistor | Electricity | 16 | Expired |
| US7514325B2 | Fin-FET having GAA structure and methods of fabricating the same | Electricity | 15 | Active |
| US7531412B2 | Methods of manufacturing semiconductor memory devices including a vertical channel transistor | Electricity | 12 | Active |
| US7868380B2 | Fin FET and method of fabricating same | Electricity | 11 | Active |
| US8757088B2 | Mask frame assembly | Chemistry; Metallurgy | 11 | Active |
| US7566619B2 | Methods of forming integrated circuit devices having field effect transistors of different types in different device regions | Electricity | 10 | Active |
| US7804137B2 | Field effect transistor (FET) devices and methods of manufacturing FET devices | Electricity | 10 | Active |
| US7781287B2 | Methods of manufacturing vertical channel semiconductor devices | Electricity | 10 | Active |
| US7407845B2 | Field effect transistor and method for manufacturing the same | Electricity | 9 | Expired |
| US8072804B2 | Multi-bit flash memory devices and methods of programming and erasing the same | Physics | 9 | Active |
| US8264034B2 | Fin FET and method of fabricating same | Electricity | 9 | Active |
| US8906757B2 | Methods of forming patterns of a semiconductor device | Electricity | 9 | Active |
| US7883929B2 | Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers | Electricity | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.