Method for fabricating passivation layer
US7166542B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2003 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Nov 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.