Schottky power diode with SiCOI substrate and process for making such diode
US7166894B2 · kind B2 · utility
7Cited by
16References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2003 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Mar 12, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.