Inventor · Goncelin, FR

Nicolas Daval

25Patents
6h-index
33Co-inventors
69Inventor score

Filing activity: Mar 12, 2003 → Aug 14, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7459374B2 Method of manufacturing a semiconductor heterostructure Electricity 17 Active
US6991956B2 Methods for transferring a thin layer from a wafer having a buffer layer Electricity 12 Expired
US7449394B2 Atomic implantation and thermal treatment of a semiconductor layer Electricity 11 Active
US7232737B2 Treatment of a removed layer of silicon-germanium Emerging Cross-Sectional Technologies 9 Expired
US7166894B2 Schottky power diode with SiCOI substrate and process for making such diode Emerging Cross-Sectional Technologies 7 Expired
US7282449B2 Thermal treatment of a semiconductor layer Electricity 6 Expired
US7446019B2 Method of reducing roughness of a thick insulating layer Electricity 6 Active
US8367521B2 Manufacture of thin silicon-on-insulator (SOI) structures Electricity 6 Active
US7078353B2 Indirect bonding with disappearance of bonding layer Emerging Cross-Sectional Technologies 5 Expired
US7276428B2 Methods for forming a semiconductor structure Electricity 4 Expired
US10957577B2 Method for fabricating a strained semiconductor-on-insulator substrate Electricity 4 Active
US7645486B2 Method of manufacturing a silicon dioxide layer Electricity 3 Active
US7531427B2 Thermal oxidation of a SiGe layer and applications thereof Electricity 2 Active
US7285495B2 Methods for thermally treating a semiconductor layer Emerging Cross-Sectional Technologies 2 Expired
US8753528B2 Etchant for controlled etching of Ge and Ge-rich silicon germanium alloys Chemistry; Metallurgy 0 Active
US11876020B2 Method for manufacturing a CFET device Electricity 0 Active
US8183128B2 Method of reducing roughness of a thick insulating layer Electricity 0 Active
US11728207B2 Method for fabricating a strained semiconductor-on-insulator substrate Electricity 0 Active
US12100727B2 Method for manufacturing a substrate for a front-facing image sensor Electricity 0 Active
US9018678B2 Method for forming a Ge on III/V-on-insulator structure Electricity 0 Active
US7452792B2 Relaxation of layers Electricity 0 Active
US9768057B2 Method for transferring a layer from a single-crystal substrate Electricity 0 Active
US10672646B2 Method for fabricating a strained semiconductor-on-insulator substrate Electricity 0 Active
US9177961B2 Wafer with intrinsic semiconductor layer Electricity 0 Active
US12261079B2 Method for fabricating a strained semiconductor-on-insulator substrate Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.